Latency counter, semiconductor memory device including the same, and data processing system

ABSTRACT

To provide a latency counter capable of increasing the signal quality of outputted internal commands. There is provided a point-shift FIFO circuit controlled by count values of a counter circuit. The point-shift FIFO circuit includes: a first wired-OR circuit that combines outputs of first latch circuits; a second wired-OR circuit that combines outputs of second latch circuits; a gate circuit that combines outputs of the first and second wired-OR circuits; and reset circuits that reset the first and second wired-OR circuits, respectively, based on the count value of the counter circuit. According to the present invention, as compared to a case that outputs of all the latch circuits are wired-OR connected, output loads are more reduced. Thus, a high signal quality can be obtained.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a counter circuit, and, moreparticularly relates to a counter circuit that can suitably count aclock signal in which hazard easily occurs. Furthermore, the presentinvention relates to a latency counter, and, more particularly relatesto a latency counter that counts a latency of an internal command withina synchronous memory. Further, the present invention relates to asemiconductor memory device including such a latency counter and alsorelates to a data processing system including such a semiconductormemory device.

2. Description of Related Art

Synchronous memories represented by a synchronous DRAM (SynchronousDynamic Random Access Memory) are widely used as a main memory or thelike of personal computers. In the synchronous memory, data is inputtedand outputted in synchronism with a clock signal supplied from acontroller. Thus, when a higher-speed clock is used, the data transferrate can be increased.

However, because a DRAM core is consistently operated by an analogoperation also in the synchronous DRAM, a considerably weak charge needsto be amplified by a sensing operation. Accordingly, it is not possibleto shorten the time from issuing a read command to outputting firstdata. After the elapse of a predetermined delay time from the readcommand is issued, the first data is outputted in synchronism with anexternal clock.

This delay time is generally called “CAS latency” and is set to anintegral multiple of a clock cycle. For example, when the CAS latency is5 (CL=5), the read command is fetched in synchronism with the externalclock, and thereafter, the first data is outputted in synchronism withthe external clock that is after five cycles. That is, the first data isoutputted after the elapse of the five clocks. A counter that countssuch latency is called “latency counter”.

As the latency counter, a circuit described in Japanese PatentApplication Laid-open (JP-A) No. 2008-47267 proposed by the presentinventor(s) is well known. The latency counter described in JP-A No.2008-47267 includes a ripple counter that outputs a count value in abinary format and a point-shift FIFO circuit, in which by a count valueof the ripple counter, an input gate and an output gate of thepoint-shift FIFO circuit are controlled. The reason for using the ripplecounter as the counter circuit is due to a consideration of a point thathazard easily occurs in a clock signal that should be counted.

Japanese Patent Application Laid-open No. 2007-115351 discloses asimilar circuit, as another patent document related to the latencycounter.

As described above, it is difficult to shorten a time from the readcommand is issued until the first data is outputted. Thus, when thefrequency of the clock signal becomes higher, the latency inevitablyincreases. Thus, when the frequency of the clock signal becomes higher,a count of a larger latency is required for the latency counter. Tocount the larger latency, it suffices that the number of latch circuitsconfiguring the point-shift FIFO circuit is increased.

However, in the latency counter described in Japanese Patent ApplicationLaid-open No. 2008-47267, outputs of all the latch circuits configuringthe point-shift FIFO circuit are wired-OR connected. Thus, in proportionto the number of latch circuits, an output load becomes larger. Thus,there is a problem that when the number of latch circuits increases, thewaveform of the outputted internal command becomes dull, therebydeteriorating a signal quality.

SUMMARY

The present invention seeks to solve one or more of the above problems,or to improve upon those problems at least in part.

In one embodiment, there is provided a latency counter that counts alatency of an internal command in synchronism with a clock signal, andincludes: a counter circuit that updates a count value in synchronismwith the clock signal; and a point-shift FIFO circuit that includes aplurality of latch circuits, that fetches the internal command to anyone of the latch circuits based on a count value of the counter circuit,and that outputs the internal command fetched to any one of the latchcircuits based on the count value of the counter circuit, wherein thepoint-shift FIFO circuit includes: a first wired-OR circuit thatcombines outputs of a plurality of latch circuits belonging to a firstgroup among the latch circuits; a second wired-OR circuit that combinesoutputs of a plurality of latch circuits belonging to a second groupamong the latch circuits; a gate circuit that combines outputs of atleast the first and second wired-OR circuits; and first and second resetcircuits that reset the first and second wired-OR circuits,respectively, based on the count value of the counter circuit.

According to the present invention, as compared to a case that outputsof all the latch circuits included in the point-shift FIFO circuit arewired-OR connected, an output load is reduced more. On the other hand,when the outputs of all the latch circuits are received by a gatecircuit, a great delay can occur. To deal with these problems, in thepresent invention, a plurality of latch circuits configuring apoint-shift FIFO circuit are grouped, and outputs are wired-OR connectedfor each group. Thus, it becomes possible to obtain a high signalquality without causing a great delay. Note that the “gate circuit”indicates a logic circuit using a transistor.

In another embodiment, there is provided a semiconductor memory devicethat includes the latency counter as described above. In still anotherembodiment, there is provided a data processing system wherein thesemiconductor memory device and a data processor are connected to eachother by a system bus.

As described above, according to the present invention, a plurality oflatch circuits configuring a point-shift FIFO circuit are grouped, andoutputs are wired-OR connected for each group. Thus, a signal quality ofthe outputted internal command can be increased without causing a largedelay.

BRIEF DESCRIPTION OF THE DRAWINGS

The above features and advantages of the present invention will be moreapparent from the following description of certain preferred embodimentstaken in conjunction with the accompanying drawings, in which:

FIG. 1 is a block diagram showing an entire configuration of asemiconductor memory device 10 according to a preferred embodiment ofthe present invention;

FIG. 2 is a circuit diagram of the latency counter 55 according to thepreferred embodiment of the present invention;

FIG. 3 is a timing chart for explaining an operation of a frequencydividing circuit 100;

FIG. 4 is a timing chart for explaining an operation of a countercircuit 200;

FIG. 5 is a circuit diagram of a shift circuit 320

FIGS. 6A and 6B are pattern diagrams for explaining a function of theshift circuit 320;

FIG. 7 is a circuit diagram of a latch circuit 330-0 and an output gate340-0;

FIG. 8 is a timing chart for explaining an operation of a latencycounter 55, and shows an operation at the time of a DLL-on mode;

FIG. 9 is a timing chart for explaining an operation of the latencycounter 55, and shows an operation at the time of a DLL-off mode; and

FIG. 10 is a block diagram showing a configuration of a data processingsystem 500.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Preferred embodiments of the present invention will be explained belowin detail with reference to the accompanying drawings.

FIG. 1 is a block diagram showing an entire configuration of asemiconductor memory device 10 according to an embodiment of the presentinvention.

The semiconductor memory device 10 is a synchronous DRAM, and includesas external terminals such as: clock terminals 11 a and 11 b; commandterminals 12 a to 12 e; an address terminal 13; a data input/outputterminal 14; data strobe terminals 15 a and 15 b; and power supplyterminals 16 a and 16 b.

The clock terminals 11 a and 11 b are supplied with clock signals CK and/CK, respectively, and the supplied clock signals CK and /CK aresupplied to a clock input circuit 21. In this specification, a signalassigned with “/” at the head of a signal name means an inverted signalof the corresponding signal. Accordingly, the clock signals CK and /CKare mutually complementary signals. Output of the clock input circuit 21is supplied to a timing generating circuit 22 and a DLL circuit 23. Thetiming generating circuit 22 generates an internal clock ICLK, andserves a roll for supplying the clock to each of various types ofinternal circuits other than circuits of a data output system. The DLLcircuit 23 generates an output clock LCLK, and serves a roll forsupplying the clock to circuits of a data output system.

The output clock LCLK generated by the DLL circuit 23 is a signalphase-controlled for the clock signals CK and /CK, and is slightlyadvanced in phase for the clock signals CK and /CK so that phases ofread data DQ (and data strobe signals DQS and /DQS) match those of theclock signals CK and /CK.

Whether possible to use the DLL circuit 23 is selected according to aset content to a mode register 56. That is, when a “DLL-on mode” is setto the mode register 56, the DLL circuit 23 is in a usable state, andthe output clock LCLK is phase-controlled for the clock signals CK and/CK. On the other hand, when a “DLL-off mode” is set to the moderegister 56, the DLL circuit 23 is in a non-usable state, and the outputclock LCLK is not phase-controlled for the clock signals CK and /CK anymore. Accordingly, at the time of the DLL-off mode, the output clockLCLK is a signal of which the phase is delayed more with respect to theclock signal CK. Control of the DLL circuit 23 by the mode register 56is performed by a mode signal M.

The command terminals 12 a to 12 e are supplied with a row addressstrobe signal /RAS, a column address strobe signal /CAS, a write enablesignal /WE, a chip select signal /CS, and an on-die-termination signalODT, respectively. These command signals are supplied to a command inputcircuit 31. The command signals supplied to the command input circuit 31are supplied to a command decoder 32. The command decoder 32 generatesvarious types of internal commands ICMD by retaining, decoding,counting, and so on the command signals in synchronism with the internalclock ICLK. The generated internal commands are supplied to a rowcontrol circuit 51, a column control circuit 52, a read control circuit53, a write control circuit 54, a latency counter 55, and the moderegister 56. Among the various types of internal commands ICMD, the readcommand MDRDT is supplied at least to the latency counter 55.

The latency counter 55 delays the read command MDRDT so that the readdata is outputted after the elapse of a previously set CAS latency froma time that the read command MDRDT is issued. Whereas the read commandMDRDT is a signal synchronous with the internal clock ICLK, an outputcontrol signal DRC that is output of the latency counter 55 needs to bein synchronism with the output clock LCLK. Accordingly, the latencycounter 55 also serves a role for shifting the clock that is asynchronization target, from the internal clock ICLK to the output clockLCLK. The latency counter 55 will be described in detail later.

The address terminal 13 is supplied with an address signal ADD, and thesupplied address signal ADD is supplied to an address input circuit 41.Output of the address input circuit 41 is supplied to an address latchcircuit 42. The address latch circuit 42 latches the address signal ADDin synchronism with the internal clock ICLK. Out of the address signalADD latched to the address latch circuit 42, a row address is suppliedto a row repair circuit 61 and a column address is supplied to a columnrepair circuit 62. The row repair circuit 61 is also supplied with a rowaddress generated by a refresh counter 63. Upon entering a mode registerset, the address signal ADD is supplied to the mode register 56.

The row repair circuit 61 repairs a row address by alternativelyaccessing a redundancy word line rather than a word line that should benormally accessed when the row address indicating a defective word lineis supplied. The operation of the row repair circuit 61 is controlled bythe row control circuit 51, and the output is supplied to a row decoder71. The row decoder 71 selects any one of word lines WL included in amemory cell array 70. As shown in FIG. 1, in the memory cell array 70, aplurality of word lines WL and a plurality of bit lines BL cross, andmemory cells MC are placed at the intersections. Each bit line BL isconnected to the corresponding sense amplifier 73.

The column repair circuit 62 repairs a column address by alternativelyaccessing a redundancy bit line rather than a bit line that should benormally accessed when the column address indicating a defective bitline is supplied. The operation of the column repair circuit 62 iscontrolled by the column control circuit 52, and the output is suppliedto a column decoder 72. The column decoder 72 selects any one of senseamplifiers 73 included in the memory cell array 70.

The sense amplifier 73 selected by the column decoder 72 is connected toa read amplifier 74 at the time of a read operation and connected to awrite amplifier 75 at the time of a write operation. The operation ofthe read amplifier 74 is controlled by the read control circuit 53, andthe operation of the write amplifier 75 is controlled by the writecontrol circuit 54.

The data input/output terminal 14 outputs read data DQ and inputs writedata DQ, and is connected to a data output circuit 81 and a data inputcircuit 82. The data output circuit 81 is connected to the readamplifier 74 via a FIFO circuit 83, and thereby, a plurality ofprefetched read data DQ are burst-outputted from the data input/outputterminal 14. The data input circuit 82 is connected to the writeamplifier 75 via a FIFO circuit 84, and thereby, a plurality of writedata DQ burst-inputted from the data input/output terminal 14 issimultaneously written in the memory cell array 70.

The data strobe terminals 15 a and 15 b input and output the data strobesignals DQS and /DQS, and are connected to a data-strobe-signal outputcircuit 85 and a data-strobe-signal input circuit 86, respectively.

As shown in FIG. 1, the data output circuit 81 and thedata-strobe-signal output circuit 85 are supplied with an output clockLCLK generated by the DLL circuit 23 and an output control signal DRCgenerated by the latency counter 55. The output control signal DRC isalso supplied to the FIFO circuit 83.

The power supply terminals 16 a and 16 b are supplied with power supplypotentials VDD and VSS, respectively, and connected to aninternal-voltage generating circuit 90. The internal-voltage generatingcircuit 90 generates various types of internal voltages.

The entire configuration of the semiconductor memory device 10 is asdescribed above. The latency counter 55 included in the semiconductormemory device 10 is described next.

FIG. 2 is a circuit diagram of the latency counter 55 according to thepresent embodiment.

As shown in FIG. 2, the latency counter 55 includes: a frequencydividing circuit 100 that generates frequency dividing clocks LCLKE andLCLKO based on the output clock LCLK; a counter circuit 200 thatperforms a counting operation based on the frequency dividing clocksLCLKE and LCLKO; and a point-shift FIFO circuit 300 that uses countvalues of the counter circuit 200 to count the latency of the readcommand MDRDT. When a component is merely called “counter circuit” inthe specification, this can mean both the frequency dividing circuit 100and the counter circuit 200.

The output clock LCLK is generated by the DLL circuit 23 shown inFIG. 1. At the time of self-refresh or power-down, the operation of theDLL circuit 23 is stopped to reduce the power consumption. Accordingly,upon returning from the self-refresh mode or power-down mode, theoperation of the DLL circuit 23 is resumed, and at this time, the outputclock LCLK is temporarily in an unstable state. During this state,hazard can be outputted.

Such hazard generally results in an erroneous operation of the latencycounter. However, in the latency counter 55, even when hazard occurs inthe output clock LCLK, the count values are only made to jump, and thusthe count values do not fluctuate and a counting operating is notstopped.

The configuration and the operation of each circuit block configuringthe latency counter 55 are described below.

The frequency dividing circuit 100 is described first.

As shown in FIG. 2, the frequency dividing circuit 100 includes: a latchcircuit 101 that performs a latch operation in synchronism with afalling edge of the output clock LCLK; an inverter 102 that inverts afrequency dividing signal LQ outputted from an output terminal Q of thelatch circuit 101 to supply it to an input terminal D; an AND circuit103 that ANDs the output clock LCLK and the frequency dividing signalLQ; and an AND circuit 104 that ANDs inverted signals of the outputclock LCLK and the frequency dividing signal LQ.

With such a circuit configuration, as shown in FIG. 3, the frequencydividing clock LCLKE or output of the AND circuit 103 becomes a waveformin sequence with an even-numbered internal clock LCLK, and the frequencydividing clock LCLKO or output of the AND circuit 104 becomes a waveformin sequence with an odd-numbered internal clock LCLK. Thus, in thefrequency dividing clocks LCLKE and LCLKO, an active period (a periodduring which a high level is attained) is 0.5 tCK and an inactive period(a period during which a low level is attained) is 1.5 tCK.

Thus, the frequency dividing circuit frequency-divides the output clockLCLK by two, thereby generating the two frequency dividing clocks LCLKEand LCLKO of which the phases differ from each other. The generatedfrequency dividing clocks LCLKE and LCLKO are supplied to the countercircuit 200, as shown in FIG. 2. This results in the counter circuit 200to operate at a frequency half of the output clock LCLK.

The counter circuit 200 is described next.

As shown in FIG. 2, the counter circuit 200 includes: a first counter210 that counts the frequency dividing clock LCLKE; a second counter 220that synchronizes with the frequency dividing clock LCLKO to fetch thecount values of the first counter 210; and a selection circuit 230 thatexclusively selects the count values of the first and second counters210 and 220.

As shown in FIG. 2, the first counter 210 includes: a 2-bit ripplecounter in which ripple flip-flops 211 and 212 are connected in cascade;and a decoder 213 that decodes output of the ripple counter. A clockterminal of the flip-flop 211 is supplied with the frequency dividingclock LCLKE. Accordingly, an output bit B1 of the flip-flop 211 showsthe least significant bit of a binary signal. An output bit B2 of theflip-flop 212 is the most significant bit of the binary signal.

The output bits B1 and B2 of the flip-flops 211 and 212 are supplied tothe decoder 213. However, the output bits B1 and B2 do not changesimultaneously, but the change starts from a lower-order bit. That is, ahigher-order bit changes belatedly. In the present embodiment, toeliminate a difference in such change timings, a delay circuit 214 isused. The delay circuit 214 has a delay amount equivalent to one stageof the flip-flop. As shown in FIG. 2, the delay circuit 214 is connectedbetween the flip-flop 211 and the decoder 213. Thus, the output bit B1of the flip-flop 211 is applied a delay of one stage of the flip-flop,and thereafter, inputted to the decoder 213.

As a result, the change timings of the bits B1 and B2 inputted to thedecoder 213 substantially match with each other. The decoder 213activates any one of four (=2²) outputs to a high level based on thebits B1 and B2 that are in a binary format.

The output of the decoder 213 changes in arrear of the frequencydividing clock LCLKE due to the presence of the flip-flops 211 and 212or the delay circuit 214. However, in the present embodiment, the firstcounter 210 is the ripple counter of only two bits, and the delay amountis very small. Thus, a skew between the output of the decoder 213 andthe frequency dividing clock LCLKE is hardly a problem.

On the other hand, the second counter 220 includes data-latch flip-flops221 and 222, and a decoder 223 that decodes outputs of the flip-flops221 and 222. Clock terminals of the flip-flops 221 and 222 are suppliedwith the frequency dividing clock LCLKO delayed by a delay circuit 224.A data input terminal D of the flip-flop 221 is supplied with the outputbit B1 of the flip-flop 211, and a data input terminal D of theflip-flop 222 is supplied with the output bit B2 of the flip-flop 212.According to such a configuration, the second counter 220 can fetch thecount values of the first counter 210 in synchronism with the frequencydividing clock LCLKO. That is, when the frequency dividing clock LCLKOis activated, the count values of the second counter 220 match the countvalues of the first counter 210.

Output bits B3 and B4 of the flip-flops 221 and 222 are supplied to thedecoder 223. The output bits B3 and B4 change simultaneously, and thus adelay circuit or the like is not inserted in signal paths of the outputbits B3 and B4. However, as described above, the first counter 210 is aripple counter, and thus, when the generated output bits B1 and B2change, a delay of a total of two stages of the flip-flop occurs. Tocorrectly latch the output bits B1 and B2 having such a delay, the delaycircuit 224 is arranged in the second counter 220. The delay circuit 224has a delay amount equivalent to two stages of the flip-flop. As shownin FIG. 2, the delay circuit 224 is inserted in the signal path of thefrequency dividing clock LCLKO.

As a result, the change timings of the output bits B3 and B4 inputted tothe decoder 223 substantially match those of the output bits B1 and B2.The decoder 223 activates any one of four (=2²) outputs to a high levelbased on the bits B3 and B4 that are in a binary format.

The selection circuit 230 is configured by: four AND circuits 230-0,230-2, 230-4, and 230-6 corresponding to the outputs of the firstcounter 210; and four AND circuits 230-1, 230-3, 230-5, and 230-7corresponding to the outputs of the second counter 220. One inputterminals of the AND circuits 230-0, 230-2, 230-4, and 230-6 aresupplied with the corresponding output bits of the first counter 210,respectively, and the other input terminals are supplied commonly withthe frequency dividing clock LCLKE. One input terminals of the ANDcircuits 230-1, 230-3, 230-5, and 230-7 are supplied with thecorresponding output bits of the second counter 220, respectively, andthe other input terminals are supplied commonly with the frequencydividing clock LCLKO.

According to such a configuration, the output of the first counter 210and the output of the second counter 220 are alternately selected, andthe selected count values are supplied to the point-shift FIFO circuit300. The count values of the counter circuit 200 are used as output-gatecontrol signals COT0 to COT7.

FIG. 4 is a timing chart for describing the operation of the countercircuit 200.

As shown in FIG. 4, the output bits B1 and B2 that are the count valuesof the first counter 210 are incremented in synchronism with thefrequency dividing clock LCLKE, and the output bits B3 and B4 that arethe count values of the second counter 220 are incremented insynchronism with the frequency dividing clock LCLKO. This does not meanthat the increment operations are performed without regard to eachother. Instead, the count values of the first counter 210 are fetched asthe count values of the second counter 220, and thus the count values ofthe second counter 220 follow those of the first counter 210.Accordingly, when the count values of the first counter 210 are made tojump by hazard or the like, the count values of the second counter 220are also made to jump to the same values. In this way, the count valuesof the first counter 210 and those of the second counter 220 areincremented always in a correlated state.

The generated count values are selected by the selection circuit 230.That is, in a period during which the frequency dividing clock LCLKE isat high level, the count values of the first counter 210 are selected,and in a period during which the frequency dividing clock LCLKO is athigh level, the count values of the second counter 220 are selected. Asa result, the count values of the counter circuit 200 are incremented insynchronism with the output clock LCLK. That is, the output-gate controlsignals COT0 to COT7 are activated in this order.

Further, when the count values of the first counter 210 are made to jumpby hazard or the like, the activated output-gate control signals COT0 toCOT7 change in an unpredicted manner. However, the first and secondcounters 210 and 220 output the count values in a binary format. Thus,this eliminates a possibility of an indefinite state such as: aplurality of output-gate control signals COT0 to COT7 are simultaneouslyactivated, or neither output-gate control signals COT0 to COT7 areactivated. That is, the count values are only made to jump. Further,hazard occurs only at the time of returning from the power-down mode orthe like, and thus, in the point-shift FIFO circuit 300 described later,the read command MDRDT is not accumulated.

Accordingly, even when the count values are made to jump by hazard orthe like, the counter circuit 200 is automatically recovered, and canoperate normally immediately thereafter. This is because when thepoint-shift FIFO circuit 300 starts an operation, the count valuesthemselves of the counter circuit 200 are irrelevant, and if the countvalues sequentially change, an accurate operation can be performed.

The point-shift FIFO circuit 300 is described next.

As shown in FIG. 2, the point-shift FIFO circuit 300 includes an inputselection circuit 310, a shift circuit 320, latch circuits 330-0 to330-7, an output selection circuit 340, and a combining circuit 350.

The input selection circuit 310 is configured by eight AND circuits310-0 to 310-7. In the AND circuits 310-0 to 310-7, one input terminalsare commonly inputted the read command MDRDT, and the other inputterminals are inputted the output-gate control signals COT0 to COT7,respectively, delayed by the delay circuit 390.

Thereby, when the read command MDRDT is activated, based on the countvalues of the counter circuit 200, the read command MDRDT is supplied toany one of the signal paths 311-0 to 311-7. For example, when issupplied at the timing at which the output-gate control signal COT0 isactivated, only the signal path 311-0 is supplied with the read commandMDRDT, and the other signal paths 311-1 to 311-7 are not supplied withthe read command MDRDT. In this case, the signal paths 311-0 to 311-7are supplied with output signals of the AND circuits 310-0 to 310-7,respectively.

The signal paths 311-0 to 311-7 are connected to the input terminals ofthe shift circuit 320. The shift circuit 320 supplies the read commandMDRDT to a predetermined latch circuit based on a previously-determinedcorresponding relation between the signal paths 311-0 to 311-7 and thelatch circuits 330-0 to 330-7.

FIG. 5 is a circuit diagram of the shift circuit 320.

As shown in FIG. 5, the shift circuit 320 is configured by eightmultiplexers 320-0 to 320-7. The multiplexers 320-0 to 320-7 are allconnected to the signal paths 311-0 to 311-7, and when the read commandMDRDT is supplied onto the previously determined signal paths 311-0 to311-7, input-gate control signals CIT0 to CIT7 as outputs are activatedto a high level.

Whether the input-gate control signals CIT0 to CIT7 are set to a highlevel when the read command MDRDT is supplied on which of the signalpaths 311-0 to 311-7 totally differs depending on the multiplexers 320-0to 320-7. The designation is performed by a latency setting signal CL.

FIGS. 6A and 6B are schematic diagrams each for explaining a function ofthe shift circuit 320.

An outer ring 311 shown in FIG. 6 indicates the signal paths 311-0 to311-7, and an inner ring CIT indicates the input-gate control signalsCIT0 to CIT7. The outer ring 311 can be regarded as an AND operationbetween the output-gate control signals COT0 to COT7 and the readcommand MDRDT. The signal and the signal path that are matched with thescales assigned to the rings 311 and CIT mean the corresponding signaland signal path.

More specifically, FIG. 6A shows an example in which a differencebetween the signal paths 311-0 to 311-7 and the input-gate controlsignals CIT0 to CIT7 is set to “0”. In this case, when the read commandMDRDT is supplied to the signal path 311-0, the input-gate controlsignal CIT0 corresponding thereto becomes high level, and when the readcommand MDRDT is supplied to the signal path 311-2, the input-gatecontrol signal CIT2 corresponding thereto becomes high level. That is,provided that a signal path 311-k (k=0 to 7) and an input-gate controlsignal CITj (j=0 to 7) correspond to each other, a state of j=k isestablished.

On the other hand, FIG. 6B shows an example in which a differencebetween the signal paths 311-0 to 311-7 and the input-gate controlsignals CIT0 to CIT7 is set to “7”. This is an image obtained by turningthe inner ring CIT by seven scales in the left. In this case, when theread command MDRDT is supplied to the signal path 311-0, the input-gatecontrol signal CIT7 corresponding thereto becomes high level, and whenthe read command MDRDT is supplied to the signal path 311-3, theinput-gate control signal CIT2 corresponding thereto becomes high level.That is, a state of j−k=7 or j−k=−1 is established.

The difference can be set to any one of 0 to 7, and in a set state, thecorresponding relation between the signal path and the input-gatecontrol signal is fixed. In this way, the shift circuit 320 shifts theread command MDRDT on the signal path 311-0 to 311-7, and generates theinput-gate control signal CIT0 to CIT7. Such a difference is determinedbased on a required CAS latency.

Thus, in the present embodiment, the input selection circuit 310 isplaced at a preceding stage of the shift circuit 320, and thus, when theread command MDRDT is activated, only one of the multiplexers 320-0 to320-7 is operated. Thus, as compared to a case that all the multiplexersare operated irrespective of the presence of the activation of the readcommand MDRDT, the power consumption can be further reduced.

The input-gate control signals CIT0 to CIT7 generated by the shiftcircuit 320 are supplied to the latch circuits 330-0 to 330-7,respectively. At a succeeding stage of the latch circuits 330-0 to330-7, output gates 340-0 to 340-7 configuring the output selectioncircuit 340 are connected, respectively.

FIG. 7 is a circuit diagram of the latch circuit 330-0 and the outputgate 340-0. The other latch circuits 330-1 to 330-7 and output gates340-1 to 340-7 have the same circuit configuration as those shown inFIG. 7.

As shown in FIG. 7, the latch circuit 330-0 includes an SR (set/reset)latch circuit 331 that is set when the input-gate control signal CIT0 ischanged from a low level to a high level and is reset when theoutput-gate control signal COT0 is changed from a high level to a lowlevel. In a set state of the SR latch circuit 331, the logical level “1”is latched, and thereby, a state that the read command MDRDT is retainedis established. Resetting of the SR latch circuit 331 is performed by areset circuit 332. A reset signal RST can be inputted to the resetcircuit 332, and when the reset signal RST is activated, the latchcircuits 330-0 to 330-7 are all reset forcibly.

Further, the output gate 340-0 outputs the logical level latched to theSR latch circuit 331 in a period during which the output-gate controlsignal COT0 is at a high level. In a period during which the output-gatecontrol signal COT0 is at a low level, the output is in a high impedancestate. Outputs of the output gates 340-0 to 340-7 are supplied to thecombining circuit 350.

As shown in FIG. 2, the combining circuit 350 includes: a wired-ORcircuit 351 that combines the outputs from the output gates 340-0 to340-3; a wired-OR circuit 352 that combines the outputs from the outputgates 340-4 to 340-7; and an OR gate circuit 353 that combines outputsof the wired-OR circuits 351 and 352. Output of the OR gate circuit 352is used as an output control signal DRC.

In this way, in the present embodiment, the outputs from the eight latchcircuits 330-0 to 330-7 are grouped in two, and each group is wired-ORconnected, and the obtained wired-OR outputs are further combined by alogic gate circuit. According to such a configuration, as compared to acase that the outputs from all the latch circuits 330-0 to 330-7 arecollected together and wired-OR connected, the output loads of theoutput gates 340-0 to 340-7 are further reduced. Thus, the signalquality of the output control signal DRC can be increased.

The combining circuit 350 includes reset circuits 354 and 355 that resetthe wired-OR circuits 351 and 352, respectively. The reset circuit 354resets the wired-OR circuit 351 in response to the output-gate controlsignal COT4, and the reset circuit 355 resets the wired-OR circuit 352in response to the output-gate control signal COT0. Both the resetcircuits 354 and 355 are configured by an N-channel MOS transistor, andgates thereof are supplied with the output-gate control signals COT4 andCOT0, respectively. Sources thereof are both connected to a groundingpotential (VSS). Accordingly, when the output-gate control signal COT4is activated, the reset circuit 354 is turned on, and the wired-ORcircuit 351 is reset to a low level. Likewise, when the output-gatecontrol signal COT0 is activated, the reset circuit 355 is turned on,and the wired-OR circuit 352 is reset to a low level.

As described above, the output-gate control signals COT0 to COT7 aresequentially activated by the counter circuit 200 in this order. Thus,it is immediately after the activation of the output-gate controlsignals COT0 to COT3 is ended that the output-gate control signal COT4is activated, and thus the output control signal DRC is not outputtedfor a while from the wired-OR circuit 351. When the reset circuit 354 isturned on at such timings, a period until the output-gate controlsignals COT0 to COT3 are activated next is sufficiently secured. Thus,it becomes possible to surely reset the wired-OR circuit 351. The sameapplies to the reset circuit 355. To the wired-OR circuits 351 and 352,the latch circuits 351 a and 352 a are connected, respectively. Thereby,the logical level of a period during which all the corresponding outputgates (340-0 to 340-3 or 340-4 to 340-7) become a high impedance stateis retained.

As shown in FIG. 2, the latency counter 55 further includes a modeswitching circuit 400.

The mode switching circuit 400 includes: a delay circuit 401 that delaysthe read command MDRDT; and a multiplexer 402 that selects one of theread command MDRDT that is not delayed and the read command MDRDT thatis delayed, based on a mode signal.

The multiplexer 402 selects the read command MDRDT that is not delayedin a case of an operation mode (a DLL-on mode) in which the DLL circuit23 is used. Thereby, to the point-shift FIFO circuit 300, the readcommand MDRDT is supplied at high speed. On the other hand, in anoperation mode (a DLL-off mode) in which the DLL circuit 23 is not used,the multiplexer 402 selects the read command MDRDT that is delayed bythe delay circuit 401. As a result, the read command MDRDT is to besupplied to the point-shift FIFO circuit 300 more belatedly than theDLL-on-mode time.

The delay amount of the delay circuit 401 is preferably set to an amountequivalent to the delay of the output clock LCLK caused for the externalclock signal CK when the DLL circuit 23 is not operated. Accordingthereto, even when the output clock LCLK is delayed more than the clocksignal CK by the DLL-off mode, the same operation margin as that at thetime of the DLL-on mode can be secured.

The configuration of the latency counter 55 is as described above. Theoperation of the latency counter 55 is described next.

FIG. 8 is a timing chart for explaining the operation of the latencycounter 55, and shows an operation (latency=7) at the time of the DLL-onmode. As described above, in the DLL-on mode, the read command MDRDT issupplied to the point-shift FIFO circuit 300 at high speed.

FIG. 8 shows an example in which the read command RD is issued insynchronism with an edge 0 of the external clock CK. As shown in FIG. 8,it takes a predetermined time from the read command RD is issued untilthe internal read command MDRDT is generated. The read command MDRDT isretained in any one of the eight latch circuits 330-0 to 330-7 includedin the point-shift FIFO circuit 300, based on the output of the countercircuit 200. The example shows a state that the AND gate 310-7 isselected by the output of the delay circuit 390 at the timing at whichthe read command MDRDT is generated. Accordingly, out of the input-gatecontrol signals CIT0 to CIT7, only the input-gate control signal CIT7 isactivated, and the read command MDRDT is to be stored in the latchcircuit 330-7.

The read command MDRDT stored in the latch circuit 330-7 is retained inthe latch circuit 330-7 until the output-gate control signal COT7 isselected by the increment of the counter circuit 200. When theoutput-gate control signal COT7 is selected, and the output gate 340-7is opened, and thus, the output control signal DRC is activated. Theoutput control signal DRC is in synchronism with the output clock LCLK,and by using this, the read data DQ is actually outputted.

Thereafter, upon entering the self-refresh mode or the power-down mode,the DLL circuit 23 shown in FIG. 1 is stopped. Upon returning to thenormal operation, hazard sometimes occurs in the output clock LCLK, andas a result, the count values of the counter circuit 200 are sometimesmade to jump.

However, in the latency counter 55, the count values themselves areirrelevant, and when correct increment (or decrement) is performed atthe time of the normal operation, there is no problem at all. That is,in the first place, there is no case that the count value results in anerror, and even when the count values are changed by hazard, asubsequent operation can be directly executed. Thus, according to thelatency counter 55, it becomes possible to prevent an error resultingfrom hazard of the output clock LCLK.

FIG. 9 is a timing chart for explaining the operation of the latencycounter 55, and shows an operation (latency=6) at the time of theDLL-off mode. As described above, during the DLL-off mode, the readcommand MDRDT is delayed, and then, supplied to the point-shift FIFOcircuit 300.

As shown in FIG. 9, during the DLL-off mode, the output clock LCLK isnot phase-controlled for the external clock signal CK, and thus thereoccurs predetermined delay for the clock signal CK. Such delay is offsetby delaying supplying of the read command MDRDT by the delay circuit401. Thereby, it becomes possible to secure the same operation margin asthat at the time of the DLL-on mode.

As described above, according to the latency counter 55, the countingoperation is performed in synchronism with the frequency dividing clocksLCLKE and LCLKO obtained by frequency-dividing the output clock LCLK bytwo. Thus, even when the frequency of the output clock LCLK is high, theoperation margin of the counter circuit 200 can be sufficiently secured.

The counter circuit 200 is separated in the first counter 210 and thesecond counter 220, and thus the number of bits of the ripple counterincluded in the first counter 210 is small. Thereby, the delay occurringin the ripple counter becomes small, and as a result, it becomespossible to directly supply the frequency dividing clocks LCLKE andLCLKO to the selection circuit 230. That is, when the delay of theripple counter is large, to synchronize accurately, it is necessary todelay the frequency dividing clocks LCLKE and LCLKO by a certain extent,and then, input the same to the selection circuit 230. In this case,there occurs a need of re-synchronizing the read command MDRDT to theoutput clock LCLK by arranging a re-synchronizing circuit that restoresthe delay. Such a re-synchronizing circuit can be a factor ofdeteriorating a transfer margin of a command when the frequency of theclock is high. However, in the present embodiment, such are-synchronizing circuit is unnecessary, and as a result, even when thefrequency of the clock is high, a sufficient transfer margin can besecured.

Further, the first counter 210 counts the frequency dividing clock LCLKEin a binary format while the second counter 220 fetches the count valuesof the first counter 210 in synchronism with the frequency dividingclock LCLKO. Thus, the count values of the first counter 210 and thoseof the second counter 220 are not deviated. Thus, the read command MDRDTlatched based on the count values of the first counter 210 can beoutputted based on the count values of the second counter 220. Needlessto say, this operation can be executed vice versa. This means thatalthough the counting operation is performed in synchronism with thefrequency dividing clocks LCLKE and LCLKO, the point-shift FIFO circuit300 is not affected by the frequency-division.

That is, when the count values of the first counter 210 and those of thesecond counter 220 are unrelated, it becomes essential to output theread command MDRDT latched based on the count values of the firstcounter 210 based on the count values of the first counter 210.Likewise, it becomes essential to output the read command MDRDT latchedbased on the count values of the second counter 220 based on the countvalues of the second counter 220. In this case, the number of latenciessettable to the point-shift FIFO circuit 300 includes only an evennumber, and thus, in order that the latencies are set to odd numbers, itbecomes necessary to add a latency adding circuit or the like. However,in the present embodiment, the count values of the first counter 210 andthose of the second counter 220 are interlocked, and thus such arestraint can be eliminated. As a result, it becomes possible to set thenumber of latencies to an arbitrary value without adding a latencyadding circuit or the like.

Moreover, in the present embodiment, because the first counter 210 is aripple counter, as described above, it is possible to prevent an errorresulting from hazard of the output clock LCLK.

In the present embodiment, the input selection circuit 310 is arrangedat a preceding stage of the shift circuit 320, and only when the readcommand MDRDT is supplied, the shift circuit 320 is operated. Thus, ascompared to a case that the shift circuit is operated all the timeirrespective of the presence of the read command MDRDT, the powerconsumption can be further reduced.

In the present embodiment, the outputs of the output gates 340-0 to340-7 are grouped in two, and each group is wired-OR connected. Further,the obtained wired-OR outputs are combined by the logic gate circuit. Asa result, as compared to a case that all the outputs are collectedtogether and wired-OR connected, the output loads are further reduced.Thereby, the signal quality of the output control signal DRC can beincreased.

In the present embodiment, by using the mode switching circuit 400, whenthe DLL-off mode is selected, the read command MDRDT is supplied morebelatedly than the DLL-on-mode time. As a result, even when the outputclock LCLk is more belated than the external clock signal CK, thefetching margin of the read command MDRDT can be sufficiently securedsimilarly to a case that the DLL-on mode is selected.

FIG. 10 is a block diagram showing the configuration of a dataprocessing system 500 using the semiconductor memory device 10.

The data processing system 500 shown in the FIG. 10 has a configurationsuch that a data processor 520 and the semiconductor memory device(DRAM) 10 are mutually connected via a system bus 510. Examples of thedata processor 520 include, but are not limited to a microprocessor(MPU), a digital signal processor (DSP) or the like. In FIG. 10, for thesake of simplicity, the data processor 520 and the DRAM 530 areconnected via the system bus 510. However, these elements can beconnected by a local bus, rather than being connected via the system bus510.

In FIG. 10, for the sake of simplicity, only one set of system bus 510is shown. However, according to need, the system buses 510 can bearranged via a connector or the like, in series or in parallel. In amemory-system data processing system shown in FIG. 10, a storage device540, an I/O device 550, and a ROM 560 are connected to the system bus510. However, these constituent elements are not necessarily essential.

Examples of the storage device 540 can include a hard disk drive, anoptical disk drive, and a flash memory. Examples of the I/O device 550can include a display device such as a liquid crystal display, and aninput device such as a keyboard and a mouse. The I/O device 550 canfunction either as an input device or as an output device. For the sakeof simplicity, each constituent element shown in FIG. 10 is illustratedone each. However, the number is not limited to one. That is, two ormore constituent elements can be arranged.

It is apparent that the present invention is not limited to the aboveembodiments, but may be modified and changed without departing from thescope and spirit of the invention.

For example, in the present embodiment, the frequency dividing circuit100 is used to frequency-divide the output clock LCLK by two. However,the frequency dividing number is not limited thereto in the presentinvention. Accordingly, when the output clock LCLK is higher-speed, theoutput clock LCLK can be frequency-divided by four, and also, similarlyto the second counter 220, the third and fourth counters interlockedwith the first counter 210 can be used. In the present invention, thefrequency dividing circuit 100 is not essential, and the output clockLCLK can be directly counted.

In the present invention, the configuration of the counter circuit isarbitrary, and not limited to the configuration described above.Therefore, for example, although the first counter 210 includes a ripplecounter, the present invention is not limited thereto.

Further, in the present invention, it is not essential to provide themode switching circuit 400.

In the present embodiment, the outputs of the output gates 340-0 to340-7 are received by the wired-OR circuits 351 and 352 divided intotwo. The number of the wired-OR circuits to be divided is not limitedthereto, and the wired-OR circuits can be divided into three or more.Specifically, a ratio A/B between the number of inputs A (A=4 in thisembodiment) of one wired-OR circuit and the number B (B=2 in thisembodiment) of the wired-OR circuits is preferably in a range of 0.5 to4, and more preferably, it is in a range of 1 to 2. When the value ofA/B is set to this range, a good delay balance is achieved between theload of the wired-OR circuit and delay caused by the logic gate circuit.Thus, a high signal quality can be obtained.

In the present embodiment, the wired-OR circuit 351 is reset in responseto the output-gate control signal COT4, and the wired-OR circuit 352 isreset in response to the output-gate control signal COT0. However, thetiming at which the wired-OR circuits 351 and 352 are reset is notlimited thereto. Accordingly, it suffices that the wired-OR circuit 351is reset in response to the count values of the counter circuit 200indicating a latch circuit corresponding to the wired-OR circuit 352.Likewise, it suffices that the wired-OR circuit 352 is reset in responseto the count values of the counter circuit 200 indicating a latchcircuit corresponding to the wired-OR circuit 351.

1. A latency counter that counts a latency of an internal command insynchronism with a clock signal, the latency counter comprising: acounter circuit that updates a count value in synchronism with the clocksignal; and a point-shift FIFO circuit that includes a plurality oflatch circuits, that fetches the internal command to any one of thelatch circuits based on a count value of the counter circuit, and thatoutputs the internal command fetched to any one of the latch circuitsbased on the count value of the counter circuit, wherein the point-shiftFIFO circuit includes: a first wired-OR circuit that logically operatesbased on outputs of a plurality of latch circuits belonging to a firstgroup among the latch circuits; a second wired-OR circuit that logicallyoperates based on outputs of a plurality of latch circuits belonging toa second group among the latch circuits; a gate circuit that logicallyoperates based on outputs of at least the first and second wired-ORcircuits; and first and second reset circuits that reset the first andsecond wired-OR circuits, respectively, based on the count value of thecounter circuit.
 2. The latency counter as claimed in claim 1, whereinthe first reset circuit resets the first wired-OR circuit in response tothe count value of the counter circuit indicating a predetermined latchcircuit different from the latch circuits belonging to the first group,and the second reset circuit resets the second wired-OR circuit inresponse to the count value of the counter circuit indicating apredetermined latch circuit different from the latch circuits belongingto the second group.
 3. The latency counter as claimed in claim 1,wherein the point-shift FIFO circuit includes: an input selectioncircuit that supplies the internal command to any one of a plurality ofsignal paths based on the count value of the counter circuit; a shiftcircuit that supplies the internal command to a predetermined latchcircuit based on a predetermined relationship between the signal pathsand the latch circuits; and an output selection circuit that outputs theinternal command fetched to any one of the latch circuits based on thecount value of the counter circuit.
 4. The latency counter as claimed inclaim 3, wherein each of the latch circuits include an SR (set/reset)latch circuit that is set in response to input of the internal commandand that is reset in response to output of the internal command.
 5. Thelatency counter as claimed in claim 3, wherein the shift circuit iscapable of changing the relationship between the signal paths and thelatch circuits based on a setting signal.
 6. The latency counter asclaimed in claim 1, further comprising a mode switching circuit thatrelatively promptly supplies the internal command to the point-shiftFIFO circuit in a first operation mode, and relatively slowly suppliesthe internal command to the point-shift FIFO circuit in a secondoperation mode.
 7. The latency counter as claimed in claim 6, whereinthe first operation mode is a state where the clock signal isphase-controlled, and the second operation mode is a state where theclock signal is not phase-controlled.
 8. A semiconductor memory devicecomprising a latency counter that counts a latency of an internalcommand in synchronism with a clock signal, the latency counterincluding: a counter circuit that updates a count value in synchronismwith the clock signal; and a point-shift FIFO circuit that includes aplurality of latch circuits, that fetches the internal command to anyone of the latch circuits based on a count value of the counter circuit,and that outputs the internal command fetched to any one of the latchcircuits based on the count value of the counter circuit, wherein thepoint-shift FIFO circuit includes: a first wired-OR circuit thatlogically operates based on outputs of a plurality of latch circuitsbelonging to a first group among the latch circuits; a second wired-ORcircuit that logically operates based on outputs of a plurality of latchcircuits belonging to a second group among the latch circuits; a gatecircuit that logically operates based on outputs of at least the firstand second wired-OR circuits; and first and second reset circuits thatreset the first and second wired-OR circuits, respectively, based on thecount value of the counter circuit.
 9. A data processing systemcomprising a semiconductor memory device and a data processor connectedto each other by a system bus, the semiconductor memory device includinga latency counter that counts a latency of an internal command insynchronism with a clock signal, the latency counter including: acounter circuit that updates a count value in synchronism with the clocksignal; and a point-shift FIFO circuit that includes a plurality oflatch circuits, that fetches the internal command to any one of thelatch circuits based on a count value of the counter circuit, and thatoutputs the internal command fetched to any one of the latch circuitsbased on the count value of the counter circuit, wherein the point-shiftFIFO circuit includes: a first wired-OR circuit that logically operatesbased on outputs of a plurality of latch circuits belonging to a firstgroup among the latch circuits; a second wired-OR circuit that logicallyoperates based on outputs of a plurality of latch circuits belonging toa second group among the latch circuits; a gate circuit that logicallyoperates based on outputs of at least the first and second wired-ORcircuits; and first and second reset circuits that reset the first andsecond wired-OR circuits, respectively, based on the count value of thecounter circuit.